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[IEEE IEEE International Symposium on Power Semiconductor Devices and Integrated Circuits - Cambridge, UK (14-17 April 2003)] ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. - New anode design concept of 600V thin wafer PT-IGBT with very low dose p-buffer and transparent p-emitter

✍ Scribed by Matsudai, T.; Tsukuda, M.; Umekawa, S.; Tanaka, M.; Nakagawa, A.

Book ID: 111973447
Publisher: IEEE
Year: 2003
Weight: 235 KB
Volume: 0
Category: Article
ISBN-13: 9780780378766
DOI: 10.1109/ispsd.2003.1225234

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