𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Random dopant fluctuation modelling with the impedance field method

✍ Scribed by Wettstein, A.; Penzin, O.; Lyumkis, E.; Fichtner, W.

Book ID: 125815411
Publisher: IEEE
Year: 2003
Tongue: English
Weight: 348 KB
Category: Article
ISBN-13: 9780780378261
DOI: 10.1109/SISPAD.2003.1233645

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📜 SIMILAR VOLUMES

[IEEE IEEE International Conference on S

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Analysis of fluctuations in ultra-small semiconductor devices

✍ Andrei, P.; Mayergoyz, I.D. 📂 Article 📅 2003 🏛 IEEE ⚖ 487 KB

[IEEE IEEE International Conference on S

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Comparison of numerical quantum device models

✍ Kosina, H.; Nedjalkov, M.; Selberherr, S.; Nedjalkov, M. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 255 KB

[IEEE IEEE International Conference on S

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Electrostatic analysis of carbon nanotube arrays

✍ Xinlin Wang, ; Wong, H.S.P.; Oldiges, P.; Miller, R.J. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 483 KB

[IEEE IEEE International Conference on S

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Theory and design of field-effect carbon nanotube transistors

✍ Pennington, G.; Goldsman, N. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 283 KB

[IEEE IEEE International Conference on S

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Simulation of electronic control in electroosmotic flow channels

✍ Dudar, T.; Mikulchenko, O.; Alum, N.; Mayaram, K. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 711 KB

[IEEE IEEE International Conference on S

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Hydrodynamic simulation of RF noise in deep-submicron MOSFETs

✍ Tae-young Oh, ; Jungemann, C.; Dutton, R.W. 📂 Article 📅 2003 🏛 IEEE ⚖ 485 KB