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[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - Low on-resistance 1.2 kV 4H-SiC MOSFETs integrated with current sensor

✍ Scribed by Furukawa, A.; Kinouchi, S.; Nakatake, H.; Ebiike, Y.; Kagawa, Y.; Miura, N.; Nakao, Y.; Imaizumi, M.; Sumitani, H.; Oomori, T.

Book ID: 127294318
Publisher: IEEE
Year: 2011
Weight: 512 KB
Category: Article
ISBN: 1424484251
DOI: 10.1109/ispsd.2011.5890847

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