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[IEEE GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1988 - Atlanta, GA, USA (1-4 Nov. 1998)] GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) - A selective gate recess process utilizing MBE-grown In/sub 0.5/Ga/sub 0.5/P etch-stop layers for GaAs-based FET technologies

✍ Scribed by Hanson, A.W.; Danzilio, D.; Bacher, K.; Leung, L.

Book ID: 126745715
Publisher: IEEE
Year: 1998
Weight: 281 KB
Category: Article
ISBN-13: 9780780350496
DOI: 10.1109/GAAS.1998.722668

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