𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 - Orlando, FL, USA (3-6 Nov. 1996)] GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 - An accurate, large signal, high frequency model for GaAs HBTs

✍ Scribed by Camnitz, L.H.; Kofol, S.; Low, T.; Bahl, S.R.

Book ID: 121259169
Publisher: IEEE
Year: 1996
Weight: 337 KB
Category: Article
ISBN-13: 9780780335042
DOI: 10.1109/GAAS.1996.567895

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE GaAs IC Symposium IEEE Gallium Ars

[IEEE GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 - Orlando, FL, USA (3-6 Nov. 1996)] GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 - W-band InGaAs/InP PIN diode monolithic integrated switches

✍ Alekseev, E.; Pavlidis, D.; Dickmann, M.; Hackbarth, T. 📂 Article 📅 1996 🏛 IEEE ⚖ 547 KB

[IEEE GaAs IC Symposium IEEE Gallium Ars

[IEEE GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 - Orlando, FL, USA (3-6 Nov. 1996)] GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 - Growth and properties of very large crystals of semi-insulating gallium arsenide

✍ Ware, R.M.; Higgins, W.; O'Hearn, K.; Tiernan, M. 📂 Article 📅 1996 🏛 IEEE ⚖ 411 KB

[IEEE GaAs IC Symposium IEEE Gallium Ars

[IEEE GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 - Orlando, FL, USA (3-6 Nov. 1996)] GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 - Unlicensed millimeter wave communications. A new opportunity for MMIC technology at 60 GHz

✍ Van Tuyl, R.L. 📂 Article 📅 1996 🏛 IEEE ⚖ 418 KB

[IEEE GaAs IC Symposium IEEE Gallium Ars

[IEEE GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 - Orlando, FL, USA (3-6 Nov. 1996)] GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 - A 560 mW, 21% power-added efficiency V-band MMIC power amplifier

✍ Tang, O.S.A.; Duh, K.H.G.; Liu, S.M.J.; Smith, P.M.; Kopp, W.F.; Rogers, T.J.; P 📂 Article 📅 1996 🏛 IEEE ⚖ 384 KB

[IEEE GaAs IC Symposium IEEE Gallium Ars

[IEEE GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 - Orlando, FL, USA (3-6 Nov. 1996)] GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 - A symmetric GaAs MESFET structure with a lightly doped deep drain for linear amplifiers operating with a single low-voltage supply

✍ Hirose, M.; Nishihori, K.; Nagaoka, M.; Ikeda, Y.; Kameyama, A.; Kitaura, Y.; Uc 📂 Article 📅 1996 🏛 IEEE ⚖ 352 KB

[IEEE 10th Annual IEEE (GaAs IC) Symposi

[IEEE 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988. - Nashville, TN, USA (6-9 Nov. 1988)] 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988. - Analytical model of GaAs MESFET output conductance

✍ Lam, S.C.F.; Canfield, P.C.; McCamant, A.J.; Allstot, D.J. 📂 Article 📅 1988 🏛 IEEE ⚖ 243 KB