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[IEEE GaAs IC Symposium. 21st Annual. Technical Digest 1999 - Monterey, CA, USA (17-20 Oct. 1999)] GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) - Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs

✍ Scribed by Menozzi, R.; Dieci, D.; Messori, M.; Sozzi, G.; Lanzieri, C.; Canali, C.

Book ID: 118169941
Publisher: IEEE
Year: 1999
Weight: 353 KB
Volume: 0
Category: Article
ISBN-13: 9780780355859
DOI: 10.1109/gaas.1999.803752

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