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[IEEE ASDAM'02 (4th International Conference on Advanced Semiconductor Devices and Microsystems) - Smolenice Castle, Slovakia (14-16 Oct. 2002)] The Fourth International Conference on Advanced Semiconductor Devices and Microsystem - New numerical power IGBT model and simulation of its electrical characteristics

✍ Scribed by Benbahouche, L.; Latrech, S.; Gontrand, C.

Book ID: 121883988
Publisher: IEEE
Year: 2002
Weight: 181 KB
Category: Article
ISBN-13: 9780780372764
DOI: 10.1109/ASDAM.2002.1088509

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