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[IEEE 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings - Maui, HI, USA (20-23 May 1996)] 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings - Evaluation of thick silicon dioxides grown on trench MOS gate structures

✍ Scribed by Nakamura, K.; Minato, T.; Takahashi, T.; Nakamura, H.; Harada, M.

Book ID: 111886163
Publisher: IEEE
Year: 1996
Tongue: English
Weight: 563 KB
Volume: 0
Category: Article
ISBN-13: 9780780331068
DOI: 10.1109/ispsd.1996.509453

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