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[IEEE 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - Beijing, China (Oct. 18-21, 2004)] Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - Decrease in interface states density of 4H-SiC MOS under high electric field stress

✍ Scribed by Zhao, P.; Rusli, ; Tin, C.C.; Yoon, S.F.; Zhu, W.G.; Ahn, J.; Ligatchev, V.

Book ID: 121187516
Publisher: IEEE
Year: 2004
Weight: 791 KB
Volume: 3
Category: Article
ISBN-13: 9780780385115
DOI: 10.1109/ICSICT.2004.1435308

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