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[IEEE 61st Device Research Conference - Salt Lake City, UT, USA (23-25 June 2003)] 61st Device Research Conference. Conference Digest (Cat. No.03TH8663) - Fabrication and characterization of high current gain ((β=430) and high power (23 A-500 V) 4H-SiC darlington bipolar transistors

✍ Scribed by Yanbin Luo, ; Jianhui Zhang, ; Alexandrov, P.; Fursin, L.; Zhao, J.H.

No coin nor oath required. For personal study only.

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