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[IEEE 4th International Symposium on Power Semiconductor Devices and Ics - Tokyo, Japan (May 19-21, 1992)] Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics - Full dynamic power diode model including temperature behavior for use in circuit simulators

✍ Scribed by Goebel, H.; Hoffmann, K.

Book ID: 115468840
Publisher: IEEE
Year: 1992
Weight: 332 KB
Volume: 0
Category: Article
DOI: 10.1109/ispsd.1992.991249

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