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[IEEE 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2014.4.28-2014.4.30)] Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Cryo implanted high performance n+/p junctions in Ge for future CMOS

✍ Scribed by Bhatt, P.; Swarnkar, P.; Misra, A.; Hatem, C.; Nainani, A.; Lodha, S.

Book ID: 126910571
Publisher: IEEE
Year: 2014
Weight: 749 KB
Category: Article
ISBN: 147992217X
DOI: 10.1109/vlsi-tsa.2014.6839660

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