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[IEEE 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2014.4.28-2014.4.30)] Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Influence of technological and geometrical parameters on low-frequency noise in SOI omega-gate nanowire NMOSFETs

✍ Scribed by Koyama, M.; Casse, M.; Coquand, R.; Barraud, S.; Ghibaudo, G.; Iwai, H.; Reimbold, G.

Book ID: 126607527
Publisher: IEEE
Year: 2014
Weight: 779 KB
Category: Article
ISBN: 147992217X
DOI: 10.1109/VLSI-TSA.2014.6839653

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