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[IEEE 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2014.4.28-2014.4.30)] Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Impact of channel doping on the device and NBTI performance in FinFETs for low power applications

✍ Scribed by Sachid, Angada B.; Chenming Hu,

Book ID: 125490582
Publisher: IEEE
Year: 2014
Weight: 560 KB
Category: Article
ISBN: 147992217X
DOI: 10.1109/VLSI-TSA.2014.6839654

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