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[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Measurement and analysis of gate-induced drain leakage in short-channel strained silicon germanium-on-insulator pMOS FinFETs

✍ Scribed by Balakrishnan, Karthik; Hashemi, Pouya; Ott, John A.; Leobandung, Effendi; Park, Dae-Gyu

No coin nor oath required. For personal study only.

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