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[IEEE 2014 26th International Conference on Indium Phosphide and Related Materials (IPRM) - Montpellier Cedex, France (2014.5.11-2014.5.15)] 26th International Conference on Indium Phosphide and Related Materials (IPRM) - Highly sensitive planar-doped GaAsSb-based backward diodes at 170 GHz

✍ Scribed by Takahashi, Tsuyoshi; Sato, Masaru; Nakasha, Yasuhiro; Shiba, Shoichi; Hara, Naoki

Book ID: 126948890
Publisher: IEEE
Year: 2014
Weight: 259 KB
Category: Article
ISBN: 1479957291
DOI: 10.1109/iciprm.2014.6880565

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