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[IEEE 2014 26th International Conference on Indium Phosphide and Related Materials (IPRM) - Montpellier Cedex, France (2014.5.11-2014.5.15)] 26th International Conference on Indium Phosphide and Related Materials (IPRM) - Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

✍ Scribed by Mo, Jiongjiong; Lind, Erik; Wernersson, Lars-Erik

Book ID: 126934549
Publisher: IEEE
Year: 2014
Weight: 297 KB
Category: Article
ISBN: 1479957291
DOI: 10.1109/iciprm.2014.6880553

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