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[IEEE 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu (2013.4.22-2013.4.24)] 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Analysis of Germanium FinFET logic circuits and SRAMs with asymmetric gate to source/drain underlap devices

โœ Scribed by Hu, Vita Pi-Ho; Ming-Long Fan, ; Pin Su, ; Ching-Te Chuang,


Book ID
121197928
Publisher
IEEE
Year
2013
Weight
699 KB
Category
Article
ISBN
1467364223

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