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[IEEE 2013 International Conference on Control, Computing, Communication and Materials (ICCCCM) - Allahabad, India (2013.08.3-2013.08.4)] 2013 International Conference on Control, Computing, Communication and Materials (ICCCCM) - Design high performance and low power 10T full adder cell using double gate MOSFET at 45nm technology

✍ Scribed by Shrivastava, Anuj Kumar; Akashe, Shyam

Book ID: 127329654
Publisher: IEEE
Year: 2013
Weight: 844 KB
Category: Article
ISBN: 147991374X
DOI: 10.1109/iccccm.2013.6648903

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