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[IEEE 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013 - Seattle, WA, USA (2013.06.2-2013.06.7)] 2013 IEEE MTT-S International Microwave Symposium Digest (MTT) - A 110 GHz LNA with 20dB gain and 4dB noise figure in an 0.13μm SiGe BiCMOS technology

✍ Scribed by Ulusoy, A. Cagri; Kaynak, Mehmet; Valenta, Vaclav; Tillack, Bernd; Schumacher, Hermann

Book ID: 125444468
Publisher: IEEE
Year: 2013
Weight: 248 KB
Category: Article
ISBN: 1467361771
DOI: 10.1109/mwsym.2013.6697456

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