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[IEEE 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (Formerly known as SOI Conference) - Monterey, CA, USA (2013.10.7-2013.10.10)] 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Suppression of self-heating effect employing bulk vertical-channel bipolar junction transistor (BJT) type capacitorless 1T-DRAM cell

✍ Scribed by Imamoto, Takuya; Endoh, Tetsuo

Book ID: 125416921
Publisher: IEEE
Year: 2013
Weight: 329 KB
Category: Article
ISBN: 1479913618
DOI: 10.1109/S3S.2013.6716574

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