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[IEEE 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2013.06.3-2013.06.5)] 2013 IEEE International Conference of Electron Devices and Solid-state Circuits - 2DEG transport in gate recessed AlGaN/(InGaN)/GaN HEMT

โœ Scribed by Lenka, T. R.; Dash, G. N.; Panda, A. K.


Book ID
125497808
Publisher
IEEE
Year
2013
Weight
540 KB
Category
Article
ISBN
1467325236

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