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[IEEE 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2013.06.3-2013.06.5)] 2013 IEEE International Conference of Electron Devices and Solid-state Circuits - Strain modeling in source exhaustion regime of Carbon nanotube field effect transistor

✍ Scribed by Ahmed, Zubair; Mansun Chan,

Book ID: 124068006
Publisher: IEEE
Year: 2013
Weight: 538 KB
Category: Article
ISBN: 1467325236
DOI: 10.1109/EDSSC.2013.6628235

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