[IEEE 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Bordeaux, France (2013.09.30-2013.10.3)] 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) - SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics

✍ Scribed by Camillo-Castillo, R.A.; Liu, Q.Z.; Adkisson, J. W.; Khater, M.H.; Gray, P. B.; Jain, V.; Leidy, R.K.; Pekarik, J. J.; Gambino, J.P.; Zetterlund, B.; Willets, C.; Parrish, C.; Engelmann, S.U.; Pyzyna, A.M.; Cheng, P.; Harame, D. L.

• Book ID: 121815386
• Publisher: IEEE
• Year: 2013
• Weight: 224 KB
• Category: Article
• ISBN: 147990127X
• DOI: 10.1109/BCTM.2013.6798182