[IEEE 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu (2012.04.23-2012.04.25)] Proceedings of Technical Program of 2012 VLSI Technology, System and Application - Optimizing state-of-the-art 28nm core/SRAM device performance by cryo-implantation technology

✍ Scribed by Yang, C. L.; Li, C. I.; Lin, G. P.; Chen, W. J.; Tsai, C. H.; Huang, Y. S.; Fu, C.; Lu, T. Y.; Wang, H. Y.; Hsu, B. C.; Huang, C. T.; Chan, M.; Wu, J. Y.; Cheng, Y. C.; Cheng, O.; Guo, B. N.; Lu, S.; Gossmann, H.-J; Colombeau, B.; Chen, I. C.

• Book ID: 126724865
• Publisher: IEEE
• Year: 2012
• Weight: 445 KB
• Category: Article
• ISBN: 1457720825
• DOI: 10.1109/VLSI-TSA.2012.6210167