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[IEEE 2012 International Conference on Communications, Devices and Intelligent Systems (CODIS) - Kolkata, West Bengal, India (2012.12.28-2012.12.29)] 2012 International Conference on Communications, Devices and Intelligent Systems (CODIS) - A 2D analytical modeling approach for nanoscale strained-Si (s-Si) on silicon-germanium-on-insulator (SGOI) MOSFETs by evanescent mode analysis

✍ Scribed by Kumar, Mirgender; Dubey, Sarvesh; Jit, S.; Tiwari, Pramod Kumar

Book ID: 120068357
Publisher: IEEE
Year: 2012
Weight: 738 KB
Category: Article
ISBN: 1467346985
DOI: 10.1109/CODIS.2012.6422235

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