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[IEEE 2012 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) - Playa del Carmen, Mexico (2012.03.14-2012.03.17)] 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) - Drain current model for bulk strained silicon NMOSFETs

✍ Scribed by Tinoco, J. C.; Alvarado, J.; Martinez-Lopez, A. G.; Iniguez, B.; Cerdeira, A.

Book ID: 120067604
Publisher: IEEE
Year: 2012
Weight: 323 KB
Category: Article
ISBN: 145771115X
DOI: 10.1109/ICCDCS.2012.6188937

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