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[IEEE 2012 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (SiRF) - Santa Clara, CA, USA (2012.01.16-2012.01.18)] 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Concept of vertical bipolar transistor with lateral drift region, applied to high voltage SiGe HBT

✍ Scribed by Sorge, R.; Fischer, A.; Pliquett, R.; Wipf, C.; Schley, P.; Barth, R.

Book ID: 121743538
Publisher: IEEE
Year: 2012
Weight: 205 KB
Category: Article
ISBN: 1457713160
DOI: 10.1109/SiRF.2012.6160153

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