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[IEEE 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Singapore, Singapore (2012.11.21-2012.11.23)] 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Low-noise amplifier with 12.1 dB gain and 5.456 dB NF for V-band applications in GaAs 0.15μm pHEMT process

✍ Scribed by Chang, Chi-Chen; Chiang, Yen-Chung

Book ID: 121732261
Publisher: IEEE
Year: 2012
Weight: 519 KB
Category: Article
ISBN: 1467323047
DOI: 10.1109/RFIT.2012.6401599

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