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[IEEE 2012 IEEE International Solid- State Circuits Conference - (ISSCC) - San Francisco, CA, USA (2012.02.19-2012.02.23)] 2012 IEEE International Solid-State Circuits Conference - A ±0.4°C (3σ) −70 to 200°C time-domain temperature sensor based on heat diffusion in Si and SiO2

✍ Scribed by van Vroonhoven, Caspar; D'Aquino, Dan; Makinwa, Kofi

Book ID: 111877005
Publisher: IEEE
Year: 2012
Weight: 297 KB
Volume: 0
Category: Article
ISBN: 1467303755
DOI: 10.1109/isscc.2012.6176976

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