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[IEEE 2012 IEEE Energy Conversion Congress and Exposition (ECCE) - Raleigh, NC, USA (2012.09.15-2012.09.20)] 2012 IEEE Energy Conversion Congress and Exposition (ECCE) - Comparison study of 12kV n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications

✍ Scribed by Madhusoodhanan, Sachin; Hatua, Kamalesh; Bhattacharya, Subhashish; Leslie, Scott; Ryu, Sei-Hyung; Das, Mrinal; Agarwal, Anant; Grider, David

Book ID: 120559041
Publisher: IEEE
Year: 2012
Weight: 754 KB
Category: Article
ISBN: 1467308013
DOI: 10.1109/ECCE.2012.6342807

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