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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Experimental study to push the Flash floating gate memories toward low energy applications

โœ Scribed by Marca, V. Della; Regnier, A.; Ogier, J.-L.; Simola, R.; Niel, S.; Postel-Pellerin, J.; Lalande, F.; Molas, G.


Book ID
121281651
Publisher
IEEE
Year
2011
Weight
232 KB
Category
Article
ISBN
1457717557

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