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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Denser and more stable FinFET SRAM using multiple fin heights

✍ Scribed by Sachid, Angada B.; Hu, Chenming

Book ID: 121183411
Publisher: IEEE
Year: 2011
Weight: 285 KB
Category: Article
ISBN: 1457717557
DOI: 10.1109/ISDRS.2011.6135203

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