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[IEEE 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Tianjin, China (2011.11.17-2011.11.18)] 2011 IEEE International Conference of Electron Devices and Solid-State Circuits - Dc characteristics of proton radiated SiGe power HBTs at cryogenic temperature

✍ Scribed by Qin, Guoxuan; Jiang, Ningyue; Ma, Jianguo; Ma, Zhenqiang; Ma, Pingxi; Racanelli, Marco

Book ID: 125512913
Publisher: IEEE
Year: 2011
Weight: 143 KB
Category: Article
ISBN: 1457719967
DOI: 10.1109/EDSSC.2011.6117703

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