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[IEEE 2011 IEEE Energy Conversion Congress and Exposition (ECCE) - Phoenix, AZ, USA (2011.09.17-2011.09.22)] 2011 IEEE Energy Conversion Congress and Exposition - 10 kV, 120 A SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications

✍ Scribed by Das, Mrinal K.; Capell, Craig; Grider, David E.; Leslie, Scott; Ostop, John; Raju, Ravi; Schutten, Michael; Nasadoski, Jeffrey; Hefner, Allen

Book ID: 125421675
Publisher: IEEE
Year: 2011
Weight: 908 KB
Category: Article
ISBN: 1457705427
DOI: 10.1109/ecce.2011.6064129

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