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[IEEE 2011 69th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2011.06.20-2011.06.22)] 69th Device Research Conference - High mobility strained p-channel germanium quantum well field effect transistor for low power (Vcc = 0.5 V) III–V CMOS applications

✍ Scribed by Pillarisetty, Ravi

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