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[IEEE 2011 69th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2011.06.20-2011.06.22)] 69th Device Research Conference - High performance GaN-on-Si power switch: Role of substrate bias in device characteristics

✍ Scribed by Chu, Rongming; Zehnder, Daniel; Hughes, Brian; Boutros, Karim

No coin nor oath required. For personal study only.

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