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[IEEE 2011 69th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2011.06.20-2011.06.22)] 69th Device Research Conference - InAlAs/InGaAs metamorphic HEMT and MOS-HEMT with regrown Source/Drain by MOCVD

✍ Scribed by Zhou, Xiuju; Li, Qiang; Lau, Kei May

No coin nor oath required. For personal study only.

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