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[IEEE 2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD) - Gammarth, Tunisia (2010.10.4-2010.10.6)] 2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD) - An analytical threshold voltage model to study the scaling capability of deep submicron double-gate GaN-MESFETs

✍ Scribed by Lakhdar, N.; Djeffal, F.; Abdi, M.A.; Arar, D.

Book ID: 120173377
Publisher: IEEE
Year: 2010
Weight: 615 KB
Category: Article
ISBN: 1424468167
DOI: 10.1109/SM2ACD.2010.5672321

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