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[IEEE 2010 International SoC Design Conference (ISOCC 2010) - Incheon, Korea (South) (2010.11.22-2010.11.23)] 2010 International SoC Design Conference - Power gated SRAM circuits with data retention capability and high immunity to noise: A comparison for reliability in low leakage sleep mode

✍ Scribed by Jiao, Hailong; Kursun, Volkan

Book ID: 120263302
Publisher: IEEE
Year: 2010
Weight: 143 KB
Category: Article
ISBN: 1424486335
DOI: 10.1109/SOCDC.2010.5682988

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