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[IEEE 2010 International Conference on Microelectronics (ICM) - Cairo, Egypt (2010.12.19-2010.12.22)] 2010 International Conference on Microelectronics - Modeling of GaN MESFETs at high temperature

✍ Scribed by Shashikala, B.N.; Nagabhushana, B.S.

Book ID: 120173309
Publisher: IEEE
Year: 2010
Weight: 230 KB
Category: Article
ISBN: 161284149X
DOI: 10.1109/ICM.2010.5696202

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