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[IEEE 2010 International Conference on Microelectronics (ICM) - Cairo, Egypt (2010.12.19-2010.12.22)] 2010 International Conference on Microelectronics - A novel partially insulated Schottky source/drain MOSFET: Short channel and self heating effects

✍ Scribed by Patil, Ganesh C.; Qureshi, S.

No coin nor oath required. For personal study only.

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