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[IEEE 2010 IEEE International Symposium on Circuits and Systems - ISCAS 2010 - Paris, France (2010.05.30-2010.06.2)] Proceedings of 2010 IEEE International Symposium on Circuits and Systems - Effect of MOSFET gate-to-drain parasitic capacitance on class-E power amplifier

✍ Scribed by Wei, Xiuqin; Sekiya, Hiroo; Kuroiwa, Shingo; Suetsugu, Tadashi; Kazimierczuk, Marian K.

Book ID: 115499436
Publisher: IEEE
Year: 2010
Weight: 524 KB
Volume: 0
Category: Article
ISBN: 1424453089
DOI: 10.1109/iscas.2010.5537946

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