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[IEEE 2010 IEEE International Solid- State Circuits Conference - (ISSCC) - San Francisco, CA, USA (2010.02.7-2010.02.11)] 2010 IEEE International Solid-State Circuits Conference - (ISSCC) - A 159mm2 32nm 32Gb MLC NAND-flash memory with 200MB/s asynchronous DDR interface

✍ Scribed by Kim, Hyunggon; Park, Jung-hoon; Park, Ki-Tae; Kwak, Pansuk; Kwon, Ohsuk; Kim, Chulbum; Lee, Younyeol; Park, Sangsoo; Kim, Kyungmin; Cho, Doohyun; Lee, Juseok; Song, Jungho; Lee, Soowoong; Yoo, Hyukjun; Kim, Sanglok; Yu, Seungwoo; Kim, Sungjun; Lee, Sungsoo; Kyung, Kyehyun; Lim, Yong-Ho; Chung, Chilhee

Book ID: 115451593
Publisher: IEEE
Year: 2010
Weight: 830 KB
Volume: 0
Category: Article
ISBN: 1424460336
DOI: 10.1109/isscc.2010.5433912

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