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[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Anomalous electron mobility in extremely-thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×1018cm−3

✍ Scribed by Kadotani, Naotoshi; Takahashi, Tsunaki; Kunro Chen, ; Kodera, Tetsuo; Oda, Shunri; Uchida, Ken


Book ID
126695124
Publisher
IEEE
Year
2010
Weight
420 KB
Category
Article
ISBN
1442474181

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