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[IEEE 2010 IEEE Energy Conversion Congress and Exposition (ECCE) - Atlanta, GA, USA (2010.09.12-2010.09.16)] 2010 IEEE Energy Conversion Congress and Exposition - Modeling the inter-electrode capacitances of Si CoolMOS transistors for circuit simulation of high efficiency power systems

✍ Scribed by Yang, Nanying; Ortiz, Jose M.; Duong, Tam; Hefner, Allen; Meehan, Kathleen; Lai, Jih-Sheng

No coin nor oath required. For personal study only.

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