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[IEEE 2010 18th Iranian Conference on Electrical Engineering (ICEE) - Isfahan, Iran (2010.05.11-2010.05.13)] 2010 18th Iranian Conference on Electrical Engineering - Modeling of Hot Carrier induced substrate current and degradation in triple gate bulk FinFETs

✍ Scribed by Ghobadi, Nayereh; Afzali-Kusha, Ali; Asl-Soleimani, Ebrahim

Book ID: 121273126
Publisher: IEEE
Year: 2010
Weight: 228 KB
Category: Article
ISBN: 1424467608
DOI: 10.1109/IRANIANCEE.2010.5507046

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