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[IEEE 2010 17th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2010) - Athens, Greece (2010.12.12-2010.12.15)] 2010 17th IEEE International Conference on Electronics, Circuits and Systems - Gate oxide trap characterization under DC and pulse stress

✍ Scribed by Park, S.; Lee, J.; Ryu, Y.; Kang, J.; So, B.; Baek, D.

Book ID: 120157299
Publisher: IEEE
Year: 2010
Weight: 865 KB
Category: Article
ISBN: 1424481554
DOI: 10.1109/ICECS.2010.5724510

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