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[IEEE 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - New Orleans, LA, USA (2010.01.11-2010.01.13)] 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - Compact modeling of collector base junction space charge region transit time effect on noise in SiGe HBTs

✍ Scribed by Xu, Ziyan; Niu, Guofu; Malladi, Ramana M.

Book ID: 126655321
Publisher: IEEE
Year: 2010
Weight: 126 KB
Category: Article
ISBN: 1424454565
DOI: 10.1109/SMIC.2010.5422988

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