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[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Effect of field plate length on DC characteristics of high breakdown voltage GaN HEMTs for power switching application

✍ Scribed by Zhang, Minglan; Wang, Xiaoliang; Peng, Mingzeng; Liu, Xinyu; Wang, Ru

Book ID: 126789766
Publisher: IEEE
Year: 2010
Weight: 446 KB
Category: Article
ISBN: 1424457971
DOI: 10.1109/icsict.2010.5667651

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